Atomic Layer Deposition: Principles, Characteristics, and by Tommi Kaariainen, David Cameron, Marja?Leena Kaariainen,

By Tommi Kaariainen, David Cameron, Marja?Leena Kaariainen, Arthur Sherman(auth.)

Because the first variation used to be released in 2008, Atomic Layer Deposition (ALD) has emerged as a strong, and infrequently most popular, deposition expertise. the hot version of this groundbreaking monograph is the 1st textual content to check the topic of ALD comprehensively from a realistic point of view. It covers ALD's software to microelectronics (MEMS) and nanotechnology; many vital new and rising functions; thermal techniques for ALD progress of nanometer thick motion pictures of semiconductors, oxides, metals and nitrides; and the formation of natural and hybrid materials.Content:
Chapter 1 basics of Atomic Layer Deposition (pages 1–31):
Chapter 2 Elemental Semiconductor Epitaxial movies (pages 33–49):
Chapter three III?V Semiconductor motion pictures (pages 51–66):
Chapter four Oxide motion pictures (pages 67–159):
Chapter five Nitrides and different Compounds (pages 161–182):
Chapter 6 Metals (pages 183–206):
Chapter 7 natural and Hybrid fabrics (pages 207–213):
Chapter eight ALD functions and (pages 215–242):

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Extra info for Atomic Layer Deposition: Principles, Characteristics, and Nanotechnology Applications, Second Edition

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G L Puma, A Bono, D Krishnaiah and J C Collin, J Hazardous Materials 157, 209 (2008). 5. M Kumar and Y Ando, J Nanoscience Nanotechnology 10, 3739 (2010). 6. W C Ren,, L B Gao, L PMa, and H M Cheng, New Carbon Materials 26,71 (2011). 7. M E Alf, A Asatekin, M C Barr, S H Baxamusa, H Chelawat, G OzaydinInce, C D Petruczok, R Sreenivasan, W E Tenhaeff, N J Trujillo, S Vaddiraju, J J Xu and K K Gleason, Advanced Materials 22, 1993 (2010). 8. S. , D. Van Nostrand, Princeton, NJ, 1946. 30 Atomic Layer Deposition 9.

Hasunuma, S. Sugahara, S. Hoshino, S. Imai, K. Ikeda and M. Matsumura, J. Vac. Sci. Technol A 16, 679 © (1998), American Vacuum Society. Elemental Semiconductor Epitaxial Films 39 the heated tungsten filament used to generate the atomic hydrogen from hydrogen gas. The filament temperature was 2000°C, and the H atom exposure was maintained for 15 seconds. The system base pressure was 3 × 10-9 torr, and the sample was heated by passing an electric current through a tantalum sample holder. 5. Here we see that the SiH2Cl2 is introduced into the chamber, and held there for a period of time.

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